EKF M.2 Modules: M01-NVSRAM • PCI Express® Non Volatile SRAM Memory Mapped I/O (MMIO)

M01-NVSRAM

M.2 Module

PCI Express® Non Volatile SRAM Memory-Mapped I/O

	M01-NVSRAM Description Product Information Block Diagram
	Software Code Example
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M01-NVSRAM

M.2 2280 Module

PCI Express® Non Volatile SRAM Memory-Mapped I/O

The M01-NVSRAM is a non volatile static RAM, organized as 1024k x 32bit, for PCI Express® direct access (memory-mapped read/write to a linear address space, aka MMIO). The M01-NVSRAM is housed on a 2280 size M.2 module, suitable for any PCI Express® based M.2 host connector (M-keyed). The data transfer between host (CPU) and SRAM is controlled by an on-board FPGA via PCI Express®. Other than a normal SSD, the M01-NVSRAM is not a block device, and does not require a file system for data storage. The M01-NVSRAM supports memory-mapped I/O in a BYTE, WORD and DWORD mode instead.

The M01-NVSRAM is equipped with two 16-Mbit nvSRAMs, to be read and written an infinite number of times. Automatic store to so called QuantumTrap nonvolatile elements is initiated on power-down, and recall to SRAM is managed at power-up. A simple on-board capacitor delivers sufficient energy for the store operation at power-down. Data retention is guaranteed over 20 years, and no battery is needed for backup.

The M01-NVSRAM is suitable e.g. for industrial applications with need for a reliable power fail safe data buffer.

M01-NVSRAM • M.2 Module

Feature Summary

M.2

M.2 Type 2280 module (according to the PCI Express® M.2 Specification)
Socket 3 System Interface, module key M, PCIe-based adapter pinout (PCIe x1 Gen1)
2280-D5-M double sided module (4.2H host socket recommended)
+3.3V, 300mA max.
Random read/write access tbd MB/s
ustom specific M.2 module design on request

FPGA

Lattice ECP5, 45k LUTs, SERDES 2.5Gbps
Industrial temperature
PCI Express® interface used for memory-mapped read/write transactions in the memory address space
Control function for one or two attached nvSRAMs organized x 32
Custom specific FPGA firmware on request

SRAM

2 x Cypress CY14B116S (512kx32, 16Mbit each) nvSRAM, 4MByte in total, AutoStore/Recall
Embedded nonvolatile elements incorporate QuantumTrap technology, producing the world's most reliable nonvolatile memory
Infinite read, write, and recall cycles
1 million store cycles to QuantumTrap elements (automatically on power-down event)
Data retention 20 years
Industrial temperature

Applications

Fast memory-mapped random access read/write transfers
No file system required, operating system not necessary involved
Code examples available for download
Suitable for real time applications
Industrial applications with need for a reliable power fail safe data buffer

Environmental & Regulatory

Designed & manufactured in Germany
ISO 9001 certified quality management
Long term availability
Rugged solution
Coating, sealing, underfilling on request
RoHS compliant
Operating temperature -40°C to +85°C (industrial temperature range)
Storage Temperature: -40°C to +85°C, max. Gradient 5°C/min
Humidity 5% ... 95% RH non Condensing
Altitude -300m ... +3000m
Shock 15g 0.33ms, 6g 6ms
Vibration 1g 5-2000Hz
EC Regulations EN55022, EN55024, EN60950-1 (UL60950-1/IEC60950-1)
MTBF 59.3 years

M01-NVSRAM • Simplified Block Diagram

EKF Elektronik GmbH • Philipp-Reis-Str. 4 • 59065 Hamm • Germany
Phone +49 (0)2381/6890-0 • Fax +49 (0)2381/6890-90 • E-Mail